Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Produktinformationen "Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion"
Stimulated emission depletion (STED) and lateral charge carrier motion in InGaN/GaN quantum wells are investigated. The properties of STED are experimentally studied and furthermore analyzed with an extended version of the rate equation system typically used for fluorescence dyes. The temperature and charge carrier density dependence of lateral charge carrier motion is studied by a confocal time of flight method and a 2D version of the ABC model.
| Autor: | Solowan, Hans-Michael |
|---|---|
| ISBN: | 9783839610688 |
| Verlag: | Fraunhofer Verlag |
| Sprache: | Englisch |
| Seitenzahl: | 138 |
| Produktart: | Kartoniert / Broschiert |
| Herausgeber: | Ambacher, Oliver |
| Erscheinungsdatum: | 10.01.2017 |
| Verlag: | Fraunhofer Verlag |
| Schlagworte: | Angewandte Physik Fraunhofer IAF Halbleiterphysik InGaN Indium Gallium Nitrid Leuchtdiode Lumineszenzdiode Photolumineszenzspektroskopie electronic devices & materials scanning systems & technology |