Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits
Produktinformationen "Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits"
This work examines particularities in the switching characteristics of gallium nitride (GaN) half-bridge and driver circuits, which arise from the integration on a common conductive silicon (Si) substrate. Experimental and theoretical investigations on GaN-on-Si half-bridges with drivers contribute to unlock the benefits of monolithic GaN-based power circuit integration for compact, clean switching and efficient power electronics.
Autor: | Mönch, Stefan |
---|---|
ISBN: | 9783839617762 |
Verlag: | Fraunhofer Verlag |
Sprache: | Englisch |
Seitenzahl: | 153 |
Produktart: | Kartoniert / Broschiert |
Herausgeber: | Ambacher, Oliver |
Erscheinungsdatum: | 04.04.2022 |
Verlag: | Fraunhofer Verlag |
Schlagworte: | , Materialwissenschaftler Elektroingenieure Gallium Nitride Physiker Power Integrated Circuits Substrates Transistors Wide Band Gap Semiconductors |